JPS63165747A - 非晶質半導体イオンセンサ - Google Patents
非晶質半導体イオンセンサInfo
- Publication number
- JPS63165747A JPS63165747A JP61314243A JP31424386A JPS63165747A JP S63165747 A JPS63165747 A JP S63165747A JP 61314243 A JP61314243 A JP 61314243A JP 31424386 A JP31424386 A JP 31424386A JP S63165747 A JPS63165747 A JP S63165747A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- semiconductor layer
- ion
- ion sensor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 10
- 239000007788 liquid Substances 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 description 51
- 238000000034 method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 239000003792 electrolyte Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61314243A JPS63165747A (ja) | 1986-12-26 | 1986-12-26 | 非晶質半導体イオンセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61314243A JPS63165747A (ja) | 1986-12-26 | 1986-12-26 | 非晶質半導体イオンセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63165747A true JPS63165747A (ja) | 1988-07-09 |
| JPH0432344B2 JPH0432344B2 (en]) | 1992-05-29 |
Family
ID=18051011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61314243A Granted JPS63165747A (ja) | 1986-12-26 | 1986-12-26 | 非晶質半導体イオンセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63165747A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12334293B2 (en) | 2020-12-16 | 2025-06-17 | Pacific Engineering Corporation | Electric circuit cut-off device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57191539A (en) * | 1981-05-21 | 1982-11-25 | Nec Corp | Semiconductor ion sensor |
| JPS6082846A (ja) * | 1983-10-12 | 1985-05-11 | Sumitomo Electric Ind Ltd | 電界効果型半導体センサ |
-
1986
- 1986-12-26 JP JP61314243A patent/JPS63165747A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57191539A (en) * | 1981-05-21 | 1982-11-25 | Nec Corp | Semiconductor ion sensor |
| JPS6082846A (ja) * | 1983-10-12 | 1985-05-11 | Sumitomo Electric Ind Ltd | 電界効果型半導体センサ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12334293B2 (en) | 2020-12-16 | 2025-06-17 | Pacific Engineering Corporation | Electric circuit cut-off device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0432344B2 (en]) | 1992-05-29 |
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